【Person in charge of results】

Zhang Qian

Highlights:

    First, a new concept of using the deep-level impurity state as an "electronic memory" is proposed, which binds electrons at low temperatures and releases electrons at high temperatures. The co-doping of deep and shallow energy levels is used to modulate the carrier concentration in a wide temperature range. A new way to optimize the figure of merit in a wide temperature range;

    Second, a new type of Eu2ZnSb2-based Zintl phase thermoelectric material with a thermoelectric figure of merit breakthrough 1 was obtained, revealing the microscopic reasons for the material's ultra-low lattice thermal conductivity.